| PART |
Description |
Maker |
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| LT1995CMS LT1995CDDPBF LT1995IDDPBF LT1995CMSTRPBF |
32MHz, 1000V/μs Gain Selectable Amplifier
30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: 0°C to 70°C INSTRUMENTATION AMPLIFIER, 11500 uV OFFSET-MAX, 32 MHz BAND WIDTH, PDSO10
30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 85°C INSTRUMENTATION AMPLIFIER, 13000 uV OFFSET-MAX, 32 MHz BAND WIDTH, PDSO10
30MHz, 1000V/µs Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| AOW29S50 |
500V 29A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| FDD2572 FDU2572 |
N-Channel UltraFET Trench MOSFET 150V, 29A, 54mOhm
|
Fairchild Semiconductor
|
| BSS87 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-89, RDSon=6.0 Ohm, 0.29A, LL
|
Infineon
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
| STD29NF03LT4 |
N-CHANNEL 30V - 0.015 OHM - 29A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| FAN2502S26 FAN2503S25 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -6) 积极的固定电压稳压器
|
Fairchild Semiconductor, Corp.
3M Company
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| CDEP115MENP-1R3M |
Ceramic Conformally Coated/Radial High Voltage “Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±5%; TC: C0G; Body Size: .250" (6.35) x .220" (5.59) x .200" (5.08); Lead Style: .170" (4.32)
POWER INDUCTORS
|
SUMIDA CORPORATION.
|
|
